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| NTE2431 Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430) Description: The NTE2431 is a silicon PNP transistor in a SOT-89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings: Collector-Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector-Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA +25C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Thermal Resistance, Junction-to-Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Electrical Characteristics: (TJ = +25C unles otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO IEBO VCE(sat) hFE Cc fT Test Conditions VCB = 280V, IE = 0 VCE = 250V, IB = 0 VEB = 6V, IC = 0 IC = 50mA, IB = 5mA VCE = 10V, IC = 50mA IE = Ie = 0, VCB = 10, f = 1MHz VCE = 10V, IC = 10mA, f = 30MHz Min - - - 300 - 30 - 15 Typ - - - - - - - - Max 1 50 20 - 2 120 15 - Unit A A A V V Emitter Cutoff Current Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage DC Current Gain Collector Capacitance Transitional Frequency V(BR)CEO IC = 50mA, IB = 0, L = 25mH pF MHz .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) E C B .041 (1.05) Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View |
Price & Availability of NTE2431
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